반도체디스플레이기술학회지 (Journal of the Semiconductor & Display Technology)

한국반도체디스플레이기술학회 (The Korean Society Of Semiconductor & Display Technology)
권호 표지

증착 온도 및 수소 유량에 따른 MZO 박막의 구조적 및 전기적 특성

Structural and Electrical Characteristics of MZO Thin Films Deposited at Different Substrate Temperature and Hydrogen Flow Rate

  • 이지수 (한국기술교육대학교 에너지신소재화학공학부) ;
  • 이규만 (한국기술교육대학교 에너지신소재화학공학부)
  • Lee, Jisu (Dept. of Materials Engineering, Korea University of Technology and Education) ;
  • Lee, Kyu Mann (Dept. of Materials Engineering, Korea University of Technology and Education)
  • 투고 : 2018.04.26
  • 심사 : 2018.06.18
  • 발행 : 2018.06.30
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초록

In this study, we have studied the effect of substrate temperature and hydrogen flow rate on the characteristics of MZO thin films for the TCO(Transparent conducting oxide). MZO thin films were deposited by RF magnetron sputtering at room temperature and $100^{\circ}C$ with various $H_2$ flow rate(1sccm~4sccm). In order to investigate the effect of hydrogen gas flow rate on the MZo thin film, we experimented with changing the hydrogen in argon mixing gas flow rate from 1.0sccm to 4.0sccm. MZO thin films deposited at room temperature and $100^{\circ}C$ show crystalline structure having (002), (103) preferential orientation. The electrical resistivity of the MZO films deposited at $100^{\circ}C$ was lower than that of the MZO film deposited at room temperature. The decrease of electrical resistivity with increasing substrate temperature was interpreted in terms of the increase of the charge carrier mobility and carrier concentration which seems to be due to the oxygen vacancy generated by the reducing atmosphere in the gas. The average transmittance of the MZO films deposited at room temperature and $100^{\circ}C$ with various hydrogen gas flow was more than 80%.

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참고문헌

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