Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Study of ALD Process using the Line Type Plasma Source

라인형 플라즈마 소스를 이용한 ALD 공정 연구

  • Received : 2016.11.08
  • Accepted : 2016.12.26
  • Published : 2016.12.31
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Abstract

In this study, a new plasma source was used in the ALD process. Line type plasma sources were analyzed by electric and magnetic field simulation. And the results were compared with plasma density and electron temperature measurement results. As a result, the results of the computer simulation and the diagnosis results of plasma density and electron temperature showed similar tendency. At this time, the plasma uniformity is 95.6 %. $Al_2O_3$ thin film was coated on 6 inch Si-wafer, using this plasma source. The uniformity of the thin film was more than 98% and the thin film growth rate was 0.13 nm/cycle.

Keywords

References

  1. Ju Young Jeong, "Feasibility Study of Non-volatile Memory Device Structure for Nanometer MOSFET" Journal of KSDT Vol. 14, No. 2, 2015.
  2. AHN, Kie; FORBES, Leonard. "Hybrid ALD-CVD of PrXOY/ZrO2 Films as Gate Dielectrics." U.S. Patent Application No 11/010, pp. 766, 2004.
  3. Fortunato, E., P. Barquinha, and R. Martins. "Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances." Advanced materials Vol. 24(22) pp. 2945-2986, 2012. https://doi.org/10.1002/adma.201103228
  4. Sandhu, Gurtej, and Garo J. Derderian. "ALD method to improve surface coverage." U.S. Patent No. 6,355,561. 12 Mar. 2002.
  5. Cheol Ju Hwang, "ALD deposition technology in advanced semiconductors," KPS , No.21, Vol. 6, pp. 37-41, 2012.
  6. Kessels, W. E., & Putkonen, M. (2011). Advanced process technologies: Plasma, direct-write, atmospheric pressure, and roll-to-roll ALD. Mrs Bulletin, Vol.36(11), pp. 907-913, 2011. https://doi.org/10.1557/mrs.2011.239
  7. Schmidt, J., et al. "Surface passivation of high-efficiency silicon solar cells by atomic-layer-deposited Al2O3." Progress in photovoltaics: research and applications, Vol. 16.6, pp. 461-466, 2008. https://doi.org/10.1002/pip.823
  8. Richter, Armin, et al. "Excellent silicon surface passivation with 5 A thin ALD $Al_2O_3$ layers: Influence of different thermal post-deposition treatments." physica status solidi (RRL)-Rapid Research Letters Vol. 5.5-6, pp. 202-204, 2011. https://doi.org/10.1002/pssr.201105188