Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Characterizations of a Cold Trap System for the Process Stabilization of Al2O3 by ALD Equipment

ALD 장비의 Al2O3 공정 안정화를 위한 저온 트랩 장치의 특성 평가

  • Yong Hyeok Seo (Department of Electronics Engineering, Gachon University) ;
  • Won Woo Lee (Department of Electronics Engineering, Gachon University) ;
  • In Hwan Kim (Process Innovation Team, MILAEBO Co., Ltd.) ;
  • Ji Eun Han (Process Innovation Team, MILAEBO Co., Ltd.) ;
  • Yeon Ju Lee (Process Innovation Team, MILAEBO Co., Ltd.) ;
  • Che Hoo Cho (Process Innovation Team, MILAEBO Co., Ltd.) ;
  • Yongmin Jeon (Department of Biomedical Engineering, Gachon University) ;
  • Eou-Sik Cho (Department of Electronics Engineering, Gachon University) ;
  • Sang Jik Kwon (Department of Electronics Engineering, Gachon University)
  • 서용혁 (가천대학교 전자공학과) ;
  • 이원우 (가천대학교 전자공학과) ;
  • 김인환 ((주)미래보 공정혁신팀) ;
  • 한지은 ((주)미래보 공정혁신팀) ;
  • 이연주 ((주)미래보 공정혁신팀) ;
  • 조재효 ((주)미래보 공정혁신팀) ;
  • 전용민 (가천대학교 의공학과) ;
  • 조의식 (가천대학교 전자공학과) ;
  • 권상직 (가천대학교 전자공학과)
  • Received : 2024.03.04
  • Accepted : 2024.03.21
  • Published : 2024.03.31
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Abstract

The application of the technology for forming Al2O3 thin films using ALD(atomic layer deposition) method is rapidly increasing in the semiconductor and display fields. In order to increase the efficiency of the ALD process in a mass production line, metallic by-products generated from the ALD process chamber must be effectively collected. By collecting by-products flowing out of the chamber with a cold trap device before they go to the vacuum pump, damage to the vacuum pump can be prevented and the work room can be maintained stably, resulting in increased process flow rate. In this study, a cold trap was installed between the ALD process chamber and the dry pump to measure and analyze by-products generated during the Al2O3 thin film deposition process. As a result, it was confirmed that Al and O elements were discharged, and the collection forms were two types: bulk and powder. And the binding energy peaked at 73.7 ~ 74.3 eV, the binding energy of Al 2p, and 530.7 eV, the binding energy of O 1s, indicating that the binding structure was Al-O.

Keywords

References

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