FPD(LCD, PDP)와 Wafer(6-12인치)제조공정에서 사용되고 있는 자동화 이송 장비들의 경우, 높은 생산성과 수율을 위해 금속제의 핸드보다는 세라믹이나 복합재료(CERP)와 같이 가벼운 고강도 고강성의 소재를 사용하고 있다. 그러나 세라믹의 경우는 비안정성이나 고가격과 같은 문제점들이 있어서 사용이 제한되어 있다. 이에 비해 복합재료핸드는 반영구적인 수명과 우수한 기능으로 인해 그 사용이 점차 확대되고 있는 추세이다. 따라서, 본 연구에서는 복합재료핸드에 다양한 방법으로 기능성박막을 코팅하여 이에 따른 특성변화를 관찰하고자 하였다.

Rotating compensator spectroscopic ellipsometry의 개발과 그의 응용에 대하여 연구하였다. Spectroscopic ellipsometry는 편광된 빛이 물체의 표면에서 반사된 후 빛의 편광된 상태를 넓은 파장의 영역에 걸쳐서 측정하여 그 물질의 광학적 특성을 알아 낼 수 있는 기술이다. RCSE의 경우 얇은 투명 박막에 보다 정확한 값을 줄 뿐만 아니라, 박막의 균질도를 알 수 있는 편광 정도을 측정을 할 수 있다. 본 장비의 측정 시간은 십여 초 정도이고, 분광 범위는 1.5 eV ~ 4.5 eV이다. RCSE를 이용한 박막의 광학적 물성과 두께 그리고 deep-UV용 감광제의 선폭을 측정하였다.

본 논문에서는 P-type (100)Si 기판위에 RF magnetron sputtering법으로 강유전체 BST 박막을 증착하기 위한 완충층용(buffer layer) MgO 박막을 제작하였다. 증착 시 기판온도는 $400^{\circ}C$, 작업가스 Ar:$O_2$:=80:20, 작업진공 10m torr에서 RF 파워를 25W, 50W, 7SW로 변화하면서 증착하여 최적의 RF 파워조건을 확립하였다. XRD 측정결과 RF 파워 세기에 관계없이 MgO(200)피크만 관찰되었고 RF 파워 5OW에서 제작한 박막이 가장 양호한 결정성을 나타내었고 이 때 I-V측정결과 $\pm$ 1.5 MV/$cm^2$에서 $10^{-7}$A/$cm^2$이하의 양호한 누설전류특성을 나타내었고 C-V 측정결과 히스테리시스가 거의없는 양호한 인터페이스 특성을 보여주었고 비유전율은 약 8.4였다.

In this study, as Cu diffusion barrier, tantalum nitrides were successfully deposited on Si(100) substrate and SiO2 by plasma assisted atomic layer deposition(PAALD) and thermal ALD, using pentakis (ethylmethlyamino) tantalum (PEMAT) and $NH_3$ as precursors. The TaN films were deposited on $250^{\circ}$C by both method. The growth rates of TaN films were $0.8{\AA}$/cycle for PAALD and $0.75{\AA}$/cycle for thermal ALD. TaN films by PAALD showed good surface morphology and excellent step coverage for the trench with an aspect ratio of h/w - $1.8 : 0.12 \mu\textrm{m}$ but TaN films by thermal ALD showed bad step coverage for the same trench. The density for PAALD TaN was $11g/\textrm{cm}^3$ and one for thermal ALD TaN was $8.3g/\textrm{cm}^3$. TaN films had 3 atomic % carbon impurity and 4 atomic % oxygen impurity for PAALD and 12 atomic % carbon impurity and 9 atomic % oxygen impurity for thermal ALD. The barrier failure for Cu(200nm)/TaN(l0nm)/$SiO_2(85nm)$/Si structure was shown at temperature above $700^{\circ}$C by XRD, Cu etch pit analysis.

Si 웨이퍼제조 시 나오는 페슬러지에서 SiC 연마재와 절삭유를 분리해내면 Si 분말을 얻을 수 있다. 본 연구에서의 SiC는 폐슬러지 Si 분말에 C 분말을 혼합하여 제조할 수 있다. Si-C-O 3성분계는 Si, $SiO_2$, SiC, C 4개의 응축상과 CO, SiO, $CO_2$, $O_2$ 4개의 기체상이 가능하고 생성물들 간의 평형관계를 깁스 자유에너지에 의해 평형 반응식이 계산되어질 수 있다. 계산된 평형 반응식은 2개의 SiO, CO 분압이 각각 X, Y 좌표평면에 나타나는 상안정도를 그려볼 수 있다. 상안정도에서 자유도가 2인 경우는, $SiO_2$가 불안정하므로 SiC와 C가 공존하는 영역에서 온도를 독립 변수로 놓으면 나머지 독립 변수는 SiO 나 CO 기체 분압 둘 중 하나가 되어 하나의 직선으로 나타낼 수 있다. 직선을 경계로 각 응축상들의 안정영역을 하나의 좌표평면에 나타낸 후 온도에 따른 SiC의 안정영역을 알아본다.

The fluid flow, mass transfer, heat transfer and film thickness variation during the spin coating process are numerically studied. The model is said to be 1-dimensional because radial variations in film thickness, concentration and temperature are ignored. The finite difference method is employed to solve the equations that are simplified using the similarity transformation. In early time film thinning is due to the radial convective outflow. However that slows during the first seconds of spinning so the film thinning due to evaporation of solvent becomes sole. The time various film thickness is analyzed according to the var ious solvent fraction in the coating liquid and in the bulk of the overlying gas and the temperature variation in the liquid film during the spin coating is estimated.

The residual thermal stresses at the interface corner between the elastic substrate and the viscoelastic thin film due to cooling from cure temperature down to room temperature have been studied. The polymeric thin film was assumed to be thermorheologically simple. The boundary element method was employed to investigate the nature of stresses on the whole interface. Numerical results show that very large stress gradients are present at the interface comer and such stress singularity might lead to edge cracks or delamination.

Si-O-C-H films with a low dielectric constant were deposited on a p-type Si(100) substrate using a mixture gases of the bis-trimethylsilyl-methane (BTMSM) and oxygen by an inductively coupled plasma chemical vapor deposition (ICPCYD). High density plasma of about $~10^{12}\textrm{cm}^{-3}$ is obtained at low pressure (<400 mTorr) with rf power of about 300W in ICPCVD where the BTMSM and $O_2$ gases are fully dissociated. Fourier transform infrared (FTIR) spectra and X-ray photoelectron spectroscopy (XPS) spectra show that the film has $Si-CH_3$ and OH-related bonds. The void within films is formed due to $Si-CH_3$ and OH-related bonds after annealing at $500^{\circ}C$ for the as-deposition samples. The lowest relative dielectric constant of annealed film at $500^{\circ}C$ is about 2.1.

The present paper is to investigate the phase stability and soft magnetic properties of amorphous CoNbZr films when Pd is added as a substitution for CoNbZr alloys. The films were prepared by a RF magnetron sputtering method. The CoNbZrPd films deposited on Si wafers exhibited amorphous structures being independent upon the amount of Pd added in the films. On the addition of 4.34% Pd, the excellent soft magnetic characteristics of the films were observed with a coercive force of 0.54 Oe and an anisotropy field of 11 Oe, whereas a coercive force of 1 Oe and an anisotropy field of 3.5 Oe were shown in the film without the addition of Pd. The increased anisotropy field and low coercive force of the films may be attributed to the occupancy of Pd in the preferred sites parallel to the external magnetic field applied on the deposition process. A permeability of about 1100 was kept constant in the operation frequency ranging up to 100 MHz, which can be explained by the Landau-Lifshitz formula.

This paper reports on the fabrication process and characteristics of a ceramic thin-film pressure sensor based on Ta-N strain-gauges for harsh environment applications. The Ta-N thin-film strain-gauges are sputter-deposited on a thermally oxidized micromachined Si diaphragms with buried cavities for overpressure tolerance. The proposed device takes advantage of the good mechanical properties of single-crystalline Si as a diaphragm fabricated by SDB and electrochemical etch-stop technology, and in order to extend the temperature range, it has relatively higher resistance, stability and gauge factor of Ta-N thin-films more than other gauges. The fabricated pressure sensor presents a low temperature coefficient of resistance, high-sensitivity, low non-linearity and excellent temperature stability. The sensitivity is 1.21 ~ 1.097 mV/V.kgf/$\textrm{cm}^2$ in temperature ranges of 25~ $200^{\circ}C$ and a maximum non-linearity is 0.43 %FS.

플립칩 공정에서는 반도체 칩과 기판사이의 열팽창계수(CTE : Coefficient of Thermal Expansion)의 차와 외적 충격과 같은 이유로 인해 피로균열(Fatigue crack)이나 치명적인 전기적 결함이 발생하게 된다. 이런 부정적인 요인들로부터 칩을 보호하고 신뢰성을 향상시키기 위해서 플립칩 언더필 공정이 적용되고 있다. 본 연구에서는 기존의 몰딩 공정을 응용한 플립칩 언디필 방법을 소개하였다. 공정 이론과 디바이스를 소개하였으며, 시뮬레이션 및 수식을 통하여 최적의 언더필을 위한 몰더 설계 조건을 구하였다. 그리고 본 연구를 통해 기대되는 공정의 장점을 제시하였다.

$(Bi, La)Ti_{3}O_{12}(BLT)$ ferroelectric thin films were prepared on $Al_{2}O_{3}/Si$ substrates by the sol-gel method. The as-coated films were post-annealed at the temperature of $650^{\circ}C$ and $700^{\circ}C$ for 30 min. The crystallinty, surface morphologies and electrical properties were affected by the annealing temperatures. The BLT films annealed at above $650^{\circ}C$ exhibited typical bismuth layered perovskite structures with (00$\ell$) preferred orientation. The granular shaped grains with a size of approximately 90nm was formed in the film sample annealed at $700^{\circ}C$. The memory window volatge of the BLT film was 2.5V. The leakage current of BLT films annealed at $650^{\circ}C$ was about $1\times10^{-7}A/\textrm{cm}^2$ at 3V.

A submicron contact scheme using $WN_x$ diffusion barrier has been suggested for multilevel interconnect structure. The contact resistance of $0.4\times0.48\mu\textrm{m}^2$ size Al/WN/Ti/$n^+$-Si is 120-140 $\Omega$ and the leakage current density is below than $10^{-16}$$-10^{-15}A/\mu\textrm{m}^2$. The effect of F atoms on the submicron contact has been investigated with the nuclear resonance analysis method.

CNTs have been grown by the thermal CVD process in which $C_{2}H_{2}$ gas was deposited on the Fe - $Al(OH)_3$ mixture pretreated by mechanochemical treatment with a high energy mixer mill. As the duration time of grinding fer $Fe-(Al(OH)_3$ mixture by the mixer mill increased, amorphous $Al(OH)_3$ and more smaller Fe particles agglomerated into spheres. With unground and ground mixtures of $Fe-Al(OH)_3$, CNTs were grown at $700^{\circ}C$. As a result, CNTs grown on ground mixtures have more uniform diameter and morphology than those of unground mixture. The characterization of $Fe-Al(OH)_3$ mixture and as-grown CNTs were done by XRD, SEM and TEM.

The effects of the isoelectronic AI-doping of GaN grown by metal organic chemical vapor deposition were investigated for the first time using scanning electron microscopy (SEM), Hall measurements, photoluminescence (PL), and time-resolved PL. When a certain amount of Al was incorporated into the GaN films, the room temperature photoluminescence intensity of the films was approximately two orders larger than that of the undoped GaN. More importantly, the electron mobility significantly increased from 130 for the undoped sample to $500\textrm{cm}^2/Vs$ for the sample grown at a TMAl flow rate of $10{\mu}mol/min$, while the unintentional background concentration only increased slightly relative to the TMAl flow. The incorporation of Al as an isoelectronic dopant into GaN was easy during MOCVD growth and significantly improved the optical and electrical properties of the film. This was believed to result from a reduction in the dislocation-related non-radiative recombination centers or certain other defects due to the isoelectronic Al-doping.

$RuO_2$/GaN and related contacts were investigated for Schottky contacts in GaN-Based optical and electronic devices. We demonstrated that an $RuO_2$ film forms a stable Schottky contact on a GaN layer with a barrier height (${\Phi}_B$) of 1.46 eV and transmittance of 70% in the visible and near UV region. $RuO_2$/GaN Schottky diode showed a breakdown at over -50V and leakage current of only 0.3 nA at -5V. The $RuO_2$/GaN Schottky type photodetector had the UV/Visible rejection ratio of over $10^5$ and the responsivity of 0.23 A/W at 330 nm. The $RuO_2$ gate AlGaN/GaN EFET exhibited high drain current ($I_d$) of 689.3 mA/mm and high transconductance ($g_m$) of 197.4 mS/mm. Cut-Off frequency ($f_t$) and maximum operating frequency ($f_{max}$) were measured as 27.0 GHz and 45.5 GHz, respectively.

The effects of intake mixture temperature on performance and exhaust emissions under four kinds of engine loads were experimentally investigated by using a four-cycle, four-cylinder, swirl chamber type, water-cooled diesel engine with scrubber EGR system operating at three kinds of engine speeds. The purpose of this study is to develop the scrubber exhaust gas recirculation(EGR) control system for reducing $NO_x$ and soot emissions simultaneously in diesel engines. The EGR system is used to reduce $NO_x$ emissions. And a novel diesel soot-removal device of cylinder-type scrubber with five water injection nozzles is specially designed and manufactured to reduce soot contents in the recirculated exhaust gas to the intake system of the engine. The influences of cooled EGR and water injection, however, would be included within those of scrubber EGR system. In order to survey the effect of intake mixture temperature on performance and exhaust emissions, the intake mixtures of fresh air and recirculated exhaust gas are heated by a heating device with five heating coils made of a steel drum. It is found that the specific fuel consumption rate is considerably elevated by the increase of intake mixture temperature, and that $NO_x$ emissions are markedly decreased as EGR rates are increased and intake mixture temperature is dropped, while soot emissions are increased with increasing EGR rates and intake mixture temperature. Thus one can conclude that the performance and exhaust emissions are considerably influenced by the cooled EGR.

This study aimed to investigate flow measurement by using a 'bucket and stop-watch' method of flow measurement. Most flow measurement systems measure pressure or other fluid properties to infer flow rate, though time is a variable which can be easily and very accurately measured. The main principle behind the method was to fill up a reservoir until a set pressure had been reached. This reservoir would then be emptied and the cycle would repeat itself. The prototype was designed to control flow rate using the method. It made use of computer control with an analogue digital converter and fast acting solenoid valves which controlled the flow into a reservoir. Reservoirs were available with internal diameter of 1mm up to 5.5mm to cope with a range of flow rate.

A semiconductor cleaning technology has been based upon RCA cleaning which consumes vast amounts of chemicals and ultra pure water. This technology hence gives rise to many environmental issues, and some alternatives such as electrolyzed water are being studied. In this work, intentionally contaminated Si wafers were cleaned using the electrolyzed water. The electrolyzed waters were obtained in anode and cathode with oxidation reduction potentials and pH of -1050mV and 4.8, and -750mV and 10.0, respectively. The electrolyzed water deterioration was correlated with $CO_2$ concentration changes dissolved from air. Overflowing of electrolyzed water during cleaning particles resulted in the same cleanness as could be obtained with RCA clean. The roughness of patterned wafer surfaces after EW clean maintained that of as-received wafers. RCA clean consumed about $9\ell$ chemicals, while electrolyzed water clean did only $400m\ell$ HCl or $600m\ell$ $NH_4$Cl to clean 8" wafers in this study. It was hence concluded that electrolyzed water cleaning technology would be very effective for releasing environment, safety, and health(ESH) issues in the next generation semiconductor manufacturing.ring.

For the mold die sticking mechanism, the major explanation is that EMC filler of silica wears die surface roughened, which results in increase of adhesion strength. As big differences in experimental results from semiconductor manufacturers are dependent on EMC models, however, chemisorptions or acid-base interaction is apt to be also functioning as major mechanisms. In this investigation, the plasma source ion implantation (PSII) using $O_2$, $N_2$, and $CF_4$ modifies sample surface to form a new dense layer and improve surface hardness, and change metal surface condition from hydrophilic to hydrophobic and vice versa. Through surface energy quantification by measuring contact angle and surface ion coupling state analysis by Auger, major governing mechanism for sticking issue was figured out to be a complex of mechanical and chemical factors.

In order to predict the moldability of an injection molded part, a simulation of filling is needed. Short shot is one of the most frequent troubles encountered during injection molding process. The adjustment of process conditions is the most economic way to troubleshoot the problematic short shot in cost and time since the mold doesn't need to be modified at all. But it is difficult to adjust the process conditions appropriately in no times since it requires an empirical knowledge of injection molding. In this paper, the intelligent CAE system synergistically combines fuzzy-neural network(FNN) for heuristic knowledge with CAE programs for analytical knowledge. To evaluate the intelligent algorithms, a cellular phone flip has been chosen as a finite element model and filling analyses have been performed with a commercial CAE software. As the results, the intelligent CAE system drastically reduces the troubleshooting time of short shot in comparison with the expert's conventional way which is similar to the golden section search algorithm.

Device makers want to make higher density chips as devices shrink, especially WSix poly stack down is one of the key issues. However, EPD (End Point Detection) time delay was happened in DPS+ poly chamber which is a barrier to achieve device shrink because EPD time delay killed test pattern and next generation device. To investigate the EPD time delay, a test was done with patterned wafers. This experimental was carried out combined with OES(Optical Emission Spectroscopy) and SEM (Scanning Electron Microscopy). OES was used to find corrected wavelength in WSix stack down gate etching. SEM was used to confirm WSix gate profile and gate oxide damage. Through the experiment, a new wavelength (252nm) line of plasma is selected for DPS+ chamber to call correct EPD in WSix stack down gate etching for current device and next generation device.